GlobalFoundries has announced that the company has teamed up with Singapore’s Nanyang Technological University and the National Research Foundation to develop resistive random access memory (ReRAM). The next-generation memory technology could ultimately pave the way for use as a very fast non-volatile high-capacity embedded cache. The project will take four years and will cost S$120 million ($88 million). Under the terms of the agreement, the National Research Foundation will provide the necessary funding to Nanyang Technological University, which will spearhead the research. GlobalFoundries will support the project with its in-house manufacturing resources, just like it supports other universities on promising technologies, the company says. Right now, GlobalFoundries (and other contract makers of semiconductors) use eFlash (embedded flash) for chips that need relatively high-capacity onboard storage. This...

Microsemi Licenses Crossbar ReRAM Non-Volatile Memory

Crossbar, Inc. has announced Microsemi as the first licensee for their embedded Resistive RAM (ReRAM) memory technology. ReRAM is one of several up and coming non-volatile memory technologies, and...

9 by Billy Tallis on 5/16/2018

Western Digital to Use 3D ReRAM as Storage Class Memory for Special-Purpose SSDs

At the Flash Memory Summit this week, Western Digital announced that it intends to use 3D Resistive RAM (ReRAM) as storage class memory (SCM) for its future special-purpose ultra-fast...

38 by Anton Shilov on 8/12/2016

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